Product Description

Thin film resistors formed from a metal silicon nitride film are provided in which Tungsten, Titanium, Tantalum, and other group IVA, VA, and VII A metals are included. Deposition of these materials by sputtering a metal silicide target in a nitrogen containing atmosphere, such as 20% nitrogen and 80% argon is also provided.

Sputtering targets manufactured by Cathay Advanced Materials Limited for Thin film resistors include Chromium Disilicide (CrSi2), Chromium Silicon Oxide (Cr-SiO), Nickel-Chromium alloy (Ni/Cr 80:20 wt%), Tantalum Nitride (TaN), etc.  
 
1.) Oxide sputtering target:
CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2O3, V2O5, ZrO2 doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, Indium Tin Oxide, ITO (In2O3-SnO2), In2O3/CaO, ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), Ga2O3 doped ZnO (GZO), IGZO, ZnO2/TiO2, ZnO2/ZrO2, ZnO/LiCl, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, TiO2-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, SrZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3.

2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Sulfide, Telluride, stannate) sputtering target
LaB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, ZrC, Cr3C2, HfC, Mo2C, VC
Si3N4, AlN, BN, BN/SiC mixture, HfN, TaN, NbN, ZrN, TiN, VN
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, TaSi, WSi2, WSi, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2
Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi,
CdS, ZnS, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, MoS2/Ti, SnS2, TaS2, WS2, In2S3
Zn2SnO4, Cd2SnO4, CdTe, ZnTe, Bi2Te3, In2Te3, ZnSe

3.) Metal sputtering target:
Silver, Ag, Iridium, Ir, Ruthenium, Ru, Palladium Pd, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg, Cadmium Cd, etc.

4.) Alloy sputtering target:
Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr, Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si, Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb, Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr, Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni, Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni, Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn, Dy-Fe, Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni, Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti, Ho-Cu, Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn, LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca, Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr, Mn-Fe, Mn-Ni, Mo-Cr, Ta-Mo, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu, Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-W, Ni-V, Ni-V-Zr, Ni-Yb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr, Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe, Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr, Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co, Tb-Gd-Fe-Co, V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti, Ti-Al-V, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg, Zn-Al, Zr-Al, Zr-Ce, Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y 

5.) Thin film photovoltaic coating materials
Cadmium Sulfide CdS, Copper Sulphide CuS, Cadmium Telluride CdTe, Lead Telluride PbTe, Mercury Telluride HgTe, Indium Telluride In2Te3, Antimony Telluride Sb2Te3, Bismuth Telluride  Bi2Te3, Gallium Telluride Ga2Te3, Tin Telluride SnTe, Zinc Telluride ZnTe, CuInGaSe, In2Se3, Ga2Se3, CuInSe2, CuInS2, Zinc Stannate (Zn2SnO4), Cadmium Stannate (Cd2SnO4), SnO2, SnCl4, ZnO, Molybdenum, Indium, ZnS, ZnSe, InSb, InAs, In2S3, CuGa, Cu2S, Cu2Se.

Specification of materials (custom composition, drawing and size upon request):
1.) Foil, sheet, plate
Thickness: 0.05mm min.
Length: 1500mm max.
Width: 800mm max.

2.) Disc, wafer
Thickness: 0.05mm min.
Diameter: 600mm max.

3.) Powder
From -40, -60, -325, -325 to -1000 mesh

4.) Granule or pellet
Diameter:1mm-10mm

5.) Wire:
Diameter: 0.1mm min.
Length: according to customer's requirements.

6.) Rod
Diameter: 1.0mm-40mm
Length: 1500mm max.

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